Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates - Université Grenoble Alpes
Article Dans Une Revue Applied Surface Science Année : 2019

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hal-02151196 , version 1 (07-06-2019)

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L.A.B. Marçal, M.-I. Richard, L. Persichetti, V. Favre-Nicolin, H. Renevier, et al.. Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates. Applied Surface Science, 2019, 466, pp.801-807. ⟨10.1016/j.apsusc.2018.10.094⟩. ⟨hal-02151196⟩
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