Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector - Archive ouverte HAL Access content directly
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Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

Tristan Meunier
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hal-02018160 , version 1 (13-02-2019)

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Matias Imanol Urdampilleta, L. Hutin, B. Jadot, B. Bertrand, H. Bohuslavskyi, et al.. Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. 2017 Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. ⟨10.23919/VLSIT.2017.7998163⟩. ⟨hal-02018160⟩
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