350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2015

350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length

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hal-02018072 , version 1 (13-02-2019)

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  • HAL Id : hal-02018072 , version 1

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R. Lavieville, S. Barraud, A. Corna, X. Jehl, M. Sanquer, et al.. 350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. pp.9-12. ⟨hal-02018072⟩
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