Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry - Université Grenoble Alpes
Article Dans Une Revue Nano Letters Année : 2017

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

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hal-02005819 , version 1 (04-02-2019)

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  • HAL Id : hal-02005819 , version 1

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Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, et al.. Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry. Nano Letters, 2017, 17 (2), pp.1001-1006. ⟨hal-02005819⟩
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