Resistive Switching Study in OxRAM by Conductive Atomic Force Microscopy in Vacuum Environment - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2018

Resistive Switching Study in OxRAM by Conductive Atomic Force Microscopy in Vacuum Environment

Fichier non déposé

Dates et versions

hal-01959011 , version 1 (18-12-2018)

Identifiants

  • HAL Id : hal-01959011 , version 1

Citer

A. Singh, S. Blonkowski, M. Kogelschatz. Resistive Switching Study in OxRAM by Conductive Atomic Force Microscopy in Vacuum Environment. MRS Spring Meeting 2018, 2018, Phoenix, USA, United States. ⟨hal-01959011⟩
31 Consultations
0 Téléchargements

Partager

More