Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate - Université Grenoble Alpes Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2018

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Résumé

In0.3Ga0.7As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor deposition using the aspect ratio trapping method are studied. An appropriate method combining cathodoluminescence and high resolution scanning transmission electron microscopy characterization is performed to spatially correlate the optical and structural properties of the QW. A triple period (TP) ordering along the < 111 > direction induced by the temperature decrease during the growth to favor indium incorporation and aligned along the oxidized patterns is observed in the QW. Local ordering affects the band gap and contributes to the decrease of the optical emission efficiency. Using thermal annealing, we were able to remove the TP ordering and improve the QW optical emission by two orders of magnitude.
Fichier non déposé

Dates et versions

hal-01947882 , version 1 (07-12-2018)

Identifiants

Citer

J. Roque, B. Haas, S. David, N. Rochat, N. Bernier, et al.. Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate. Applied Physics Letters, 2018, 112 (20), pp.202104. ⟨10.1063/1.5027163⟩. ⟨hal-01947882⟩
77 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More