Accéder directement au contenu Accéder directement à la navigation
Article dans une revue

Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques

Abstract : The electronic and structural properties of an In x Ga 1Àx As quantum well (QW) stacking between AlAs barriers grown on 300 mm (001) silicon substrate by metalorganic chemical vapor deposition were investigated. Nanometer scale and spatially colocalized characterization combining low temperature cathodoluminescence (CL) and scanning transmission electron microscopy was performed. The combined interpretation of luminescence and strain measurement provides an exhaustive landscape of such complex sample. Particularly, CL analysis highlights luminescent regions characterized by quasicircular shapes and a peculiar optical emission consisting of a double peak. The characterizations provide a comprehensive analysis of these specific luminescence features. These luminescent regions, detected all over the sample, seem to be correlated to local increases in carbon and indium content in AlAs barriers and in the InGaAs QW, respectively, induced by local strain variations. These modifications alter InGaAs QW properties and thus its optical emission efficiency. Published by the AVS. https://doi.org/10.1116/1.5033363
Type de document :
Article dans une revue
Liste complète des métadonnées

Littérature citée [36 références]  Voir  Masquer  Télécharger

https://hal.univ-grenoble-alpes.fr/hal-01947865
Contributeur : Marielle Clot <>
Soumis le : lundi 6 avril 2020 - 21:37:31
Dernière modification le : samedi 1 août 2020 - 03:03:28

Fichier

roque2018.pdf
Fichiers éditeurs autorisés sur une archive ouverte

Identifiants

Collections

Citation

Joyce Roque, Georges Beainy, Névine Rochat, Nicolas Bernier, Sylvain David, et al.. Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩. ⟨hal-01947865⟩

Partager

Métriques

Consultations de la notice

369

Téléchargements de fichiers

169