Growth of anti-phase boundaries free GaAs on slightly miscut Si and Ge-buffered Si substrates - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Growth of anti-phase boundaries free GaAs on slightly miscut Si and Ge-buffered Si substrates

Fichier non déposé

Dates et versions

hal-01891345 , version 1 (09-10-2018)

Identifiants

  • HAL Id : hal-01891345 , version 1

Citer

Y. Bogumilowicz, M. Martin, R. Alcotte, R. Cipro, A-M. Papon, et al.. Growth of anti-phase boundaries free GaAs on slightly miscut Si and Ge-buffered Si substrates. The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), 2017, Warwick, United Kingdom. ⟨hal-01891345⟩
46 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More