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Communication Dans Un Congrès Année : 2016

Characterization and Development of High Dose Implanted Resist Stripping Processes

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With the increase of implantation dose in new technologies, implanted photoresist stripping is even more challenged in terms of efficiency and substrate consumption. In this work, the effect of implantation parameters (energy and implanted specie) on the photoresist modifications are studied and several plasma chemistries are evaluated to remove it. A good removal efficiency with a low substrate consumption has been found with H2-based processes especially N2H2.
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hal-01882454 , version 1 (13-10-2022)

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Marion Croisy, Cécile Jenny, Claire Richard, Denis Guiheux, Alain Campo, et al.. Characterization and Development of High Dose Implanted Resist Stripping Processes. 9th International Workshop on Plasma Etch and Strip in Microelectronics (PESM) 2019, May 2016, Grenoble, France. ⟨10.4028/www.scientific.net/SSP.255.111⟩. ⟨hal-01882454⟩
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