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Article Dans Une Revue Journal of Vacuum Science and Technology Année : 2015

Silicon etching in a pulsed HBr/O−2 plasma. I. Ion flux and energy analysis

Résumé

The ion flux and ion velocity distribution function are studied using a capacitively coupled radio frequency ion flux probe and a multigrid retarding field analyzer in an HBr/O2 pulsed plasma process, dedicated to silicon etching in gate or shallow trench isolation applications. A decrease of the duty cycle of the pulsed plasma etch process affects strongly these parameters: the mean ion flux decreases almost by the square of the duty cycle. Furthermore, the contribution of high energy ions from the on-time of the plasma is strongly reduced while their energy is slightly increased. In average, this leads to a significantly reduced ion energy and a reduced ion flux in the pulsed plasma compared to the continuous wave plasma.
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hal-01878009 , version 1 (01-09-2020)

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Moritz Haass, Maxime Darnon, Gilles Cunge, Olivier Joubert, David Gahan. Silicon etching in a pulsed HBr/O−2 plasma. I. Ion flux and energy analysis. Journal of Vacuum Science and Technology, 2015, 33 (3), pp.032202. ⟨10.1116/1.4917230⟩. ⟨hal-01878009⟩
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