Al2O3/InGaAs interface study on MOS capacitors for a 300mm process integration
Résumé
Al 2 O 3 /InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al 2 O 3 /InGaAs interface quality with a low D it value (~3×10 12 cm -2 eV -1 ), and passivated border traps.