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Article dans une revue

Recent Achievements in sub-10 nm DSA lithography for Line/Space patterning

Abstract : Silicon-containing and modified PS-b-PMMA high-χ block copolymers materials were produced to achieve lamellar mesostructure as low as 14 nm intrinsic period (L$_0$) and ordered by graphoepitaxy or chemoepitaxy processes. Line Edge Roughness (LER) measurements of 2.5 nm (3 σ) can be extracted from CD-SEM pictures of poly [(1,1-dimethylsilacyclobutane)-b-styrene] after etching step. Materials integrations on a 300 mm track process are highlighted. In fingerprint, new BCPs LWR L/S values are 1.5/1.1 nm in comparison to a graphoepitaxy flow where the LWR L/S values are 2.0/1.1 nm. Alternative methods to create high-resolution guiding patterns for directed self-assembly of block co-polymers and the scale-up to obtain industrial BCPs meeting electronic requirement are also reported.
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Contributeur : Marielle Clot <>
Soumis le : jeudi 28 juin 2018 - 09:18:27
Dernière modification le : mercredi 14 octobre 2020 - 04:19:12

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C. Navarro, C. Nicolet, F. Ariura, X. Chevalier, K. Xu, et al.. Recent Achievements in sub-10 nm DSA lithography for Line/Space patterning. Journal of Photopolymer Science and Technology, Technical Assoc of Photopolymers Japan, 2017, 30, pp.69-75. ⟨10.2494/photopolymer.30.69⟩. ⟨hal-01825083⟩



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