Atomic-scale simulations of He and H2 plasma modification of SiO2 thin films for an innovative ONO dielectric stack etching process

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http://hal.univ-grenoble-alpes.fr/hal-02337587
Contributor : Marielle Clot <>
Submitted on : Tuesday, October 29, 2019 - 3:12:21 PM
Last modification on : Thursday, October 31, 2019 - 1:03:51 AM

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  • HAL Id : hal-02337587, version 1

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F. Pinzan, R. Blanc, F. Leverd, E. Despiau-Pujo. Atomic-scale simulations of He and H2 plasma modification of SiO2 thin films for an innovative ONO dielectric stack etching process. Plasma Etch Strip in Microtechnology (PESM), Minatec, May 2019, Grenoble, France. ⟨hal-02337587⟩

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