Article Dans Une Revue Journal of Applied Physics Année : 1998

Far-infrared dielectric constant of porous silicon layers measured by terahertz time-domain spectroscopy

Résumé

We measure the refractive index and the absorption of porous silicon layers in the millimetric and submillimetric wavelength range using the terahertz time-domain spectroscopy technique. For the studied range of porosity (55%–76%), the refractive index of porous silicon is rather well described by mixture theories, in which the refractive index of bulk silicon enters as a main parameter.
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hal-04928545 , version 1 (04-02-2025)

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S. Labbé-Lavigne, S. Barret, F. Garet, L. Duvillaret, J.-L. Coutaz. Far-infrared dielectric constant of porous silicon layers measured by terahertz time-domain spectroscopy. Journal of Applied Physics, 1998, 83 (11), pp.6007-6010. ⟨10.1063/1.367467⟩. ⟨hal-04928545⟩
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