Communication Dans Un Congrès Année : 2024

Elementary surface reactions during F- and CF- based plasma cryoetching of Si and SiO2: a molecular dynamics study

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hal-04805223 , version 1 (26-11-2024)

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  • HAL Id : hal-04805223 , version 1

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J. Romero Cedillo, G. Cunge, E. Despiau-Pujo. Elementary surface reactions during F- and CF- based plasma cryoetching of Si and SiO2: a molecular dynamics study. Plasma Etch Strip in Microelectronics (PESM), Jun 2024, Leuven, Belgium. ⟨hal-04805223⟩
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