Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024

Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching

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hal-04805187 , version 1 (26-11-2024)

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  • HAL Id : hal-04805187 , version 1

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J. Nos, S. Iseni, G. Cunge, M. Kogelschatz, P. Lefaucheux, et al.. Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching. 45th International Symposium on Dry Process (DPS), Nov 2024, Hokkaïdo, Japan. ⟨hal-04805187⟩
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