Low damaged GaN surface through passivating plasma etching and post-etch treatments for improved GaN-MOS capacitor performance - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024
Fichier non déposé

Dates et versions

hal-04759770 , version 1 (30-10-2024)

Identifiants

  • HAL Id : hal-04759770 , version 1

Citer

David Cascales, Patricia Pimenta Barros, Eugénie Martinez, Riadh Ben Abbes, Bassem Salem. Low damaged GaN surface through passivating plasma etching and post-etch treatments for improved GaN-MOS capacitor performance. AVS 70, Nov 2024, Tampa, United States. ⟨hal-04759770⟩
4 Consultations
0 Téléchargements

Partager

More