Low damaged GaN surface through passivating plasma etching and post-etch treatments for improved GaN-MOS capacitor performance - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024
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hal-04759770 , version 1 (30-10-2024)

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  • HAL Id : hal-04759770 , version 1

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David Cascales, Patricia Pimenta Barros, Eugénie Martinez, Riadh Ben Abbes, Bassem Salem. Low damaged GaN surface through passivating plasma etching and post-etch treatments for improved GaN-MOS capacitor performance. AVS 70, Nov 2024, Tampa, United States. ⟨hal-04759770⟩
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