On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024

On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning

Fichier non déposé

Dates et versions

hal-04750028 , version 1 (23-10-2024)

Identifiants

  • HAL Id : hal-04750028 , version 1

Citer

S Sales De Mello, L. Jaloustre, S Labau, C Petit-Etienne, G Jacopin, et al.. On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning. bPlasma Etch and Strip in Microelectronics (PESM), 14th International Workshop, Jun 2024, Leuven, Belgium. ⟨hal-04750028⟩
0 Consultations
0 Téléchargements

Partager

More