On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024

On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning

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hal-04750028 , version 1 (23-10-2024)

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  • HAL Id : hal-04750028 , version 1

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S Sales De Mello, L. Jaloustre, S Labau, C Petit-Etienne, G Jacopin, et al.. On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning. bPlasma Etch and Strip in Microelectronics (PESM), 14th International Workshop, Jun 2024, Leuven, Belgium. ⟨hal-04750028⟩
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