Strain and lattice tilt mapping of GaN at early stage of coalescence by synchrotron x-ray nano diffraction - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2023
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hal-04624774 , version 1 (25-06-2024)

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  • HAL Id : hal-04624774 , version 1

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M. Wehbe, M. Charles, D. Pino Munoz, K. Baril, B. Alloing, et al.. Strain and lattice tilt mapping of GaN at early stage of coalescence by synchrotron x-ray nano diffraction. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Fukuoka, Japan. ⟨hal-04624774⟩
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