Helium and hydrogen plasmas interaction with Si3N4 and SiO2 materials for advanced etch applications: A molecular dynamics study - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Helium and hydrogen plasmas interaction with Si3N4 and SiO2 materials for advanced etch applications: A molecular dynamics study

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hal-04509414 , version 1 (18-03-2024)

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  • HAL Id : hal-04509414 , version 1

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E Despiau-Pujo, V Martirosyan, C Petit-Etienne, F Pinzan, F Leverd, et al.. Helium and hydrogen plasmas interaction with Si3N4 and SiO2 materials for advanced etch applications: A molecular dynamics study. Plasma Etch Strip in Microtechnology (PESM), Jun 2023, GRENOBLE, France. ⟨hal-04509414⟩
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