Abstract High- k materials are needed to minimise the gate leakage current in high-speed and high-power switching applications. In this regard, aluminium oxide (Al 2 O 3 ) deposited by plasma enhanced atomic layer deposition (PEALD) is gaining extensive attention to be used as high- k material in microelectronics. In this work, we studied the effect of substrate biasing during the oxidizing plasma step on physical, chemical and electrical properties of Al 2 O 3 thin films grown by PEALD on silicon substrate. We show that the structural and electrical properties such as the flat band voltage, and chemical composition can be tuned with the applied substrate bias. Indeed, we highlight that the dielectric constant of the MIS capacitor decreases from 8.5 to 6.5 and the charge polarity of the film is modulated from negative to positive when the applied substrate bias is increased. Using morphological and structural characterisations, we show that the substrate bias significantly affects the chemical composition of Al 2 O 3 thin film layer. Moreover, we highlight by cross-sectional transmission electron the presence of an interfacial layer between Si and Al 2 O 3 which could significantly influence the electrical properties of the deposited thin film. The chemical composition of this interfacial layer can be controlled by the applied substrate bias. Using a series of energy dispersive x-ray experiments, we further confirm the formation of aluminosilicate under low substrate bias condition while silicon oxide is formed under high bias. These findings show that the substrate biasing plays a critical role in defining physical, chemical as well as electrical properties of the PEALD Al 2 O 3 thin films.