Comparative Study of Low Damage Plasma Etching Processes on the Integrity of AlGaN Layers Integrated in GaN HEMT During Gate Opening, - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2021

Comparative Study of Low Damage Plasma Etching Processes on the Integrity of AlGaN Layers Integrated in GaN HEMT During Gate Opening,

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Physique [physics]

Marielle Clot  : Connectez-vous pour contacter le contributeur

https://hal.univ-grenoble-alpes.fr/hal-03448993

Soumis le : jeudi 25 novembre 2021-14:42:46

Dernière modification le : mardi 3 septembre 2024-13:00:47

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Dates et versions

hal-03448993 , version 1 (25-11-2021)

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  • HAL Id : hal-03448993 , version 1

Citer

O Fesiienko, C. Petit-Etienne, M. Darnon, A. Soltani, H. Maher, et al.. Comparative Study of Low Damage Plasma Etching Processes on the Integrity of AlGaN Layers Integrated in GaN HEMT During Gate Opening,. AVS 67 Virtual Symposium, Oct 2021, Virtual Symposium, United States. ⟨hal-03448993⟩

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