Optimization of electrical characteristics for electronic components is a main objective for the majority of recent research in this field. In this work, an experimental study of the Schottky diode is realized. This study is based on the proposal of a new measurement approach which concerns the Schottky contact technique by metallization of gold. The structure studied is composed of the InP substrate of selected section (1cm × 1cm), thickness of the order of 350 μm and cut out in the crystallographic plane (100). On this sub-strate, a thin layer of InN (2 nm) is engraved. We have used gold (Au) for two different values of diameters placed one next to the other in an alternative way; large ( 1.366038 mm) and small (= 0.815575 mm). Our measurement technique has allowed us to obtain the electrical characteristics of the Schottky diode I-V, C-V and G-V. These measurements allowed us to calculate the ideality factor (1.79, 2.58), the saturation current ( ,), the potential barrier (Ф  0.66 eV, Ф  eV) and the series resistance ( , ) of our diode for the two diameters. The measurement results obtained on our Au/n-type InN/InP diode show the optimized electrical characteristics of the studied Schottky diode. In the logic of comparison of our work, we compared the obtained results for each contact and also the important results of other recent works for the same field of research. This comparison showed us a good agreement from the point of view of numerical values as well as the effectiveness of our proposed measurement approach.