Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence
Résumé
Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAs x P 1-x quantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH 4 /H 2 /Ar and Cl 2 /CH 4 /Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the intensity variation of the emissions associated with the quantum wells across the stripes. The possible origins of these effects are investigated in terms of carrier recombination on the vertical sidewalls of the stripes and lateral diffusion of species from the plasma during etching. Cathodoluminescence measurements on samples under DC-bias also show the quantum confined Stark effect which is correlated to the material modifications induced by the etching.
Domaines
Physique [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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