Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs) - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2019

Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs)

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hal-02916150 , version 1 (17-08-2020)

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  • HAL Id : hal-02916150 , version 1

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Fesiienko Oleh, Erwine Pargon, Hassan Maher, Camille Petit-Etienne, Ali Soltani, et al.. Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs). Journées nationales sur les technologies émergentes en micro-nano fabrication, (JNTE2019), Nov 2019, Grenoble, France. ⟨hal-02916150⟩
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