A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs - Université Grenoble Alpes
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2011

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

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hal-02419609 , version 1 (19-12-2019)

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Alessandro Cresti, Marco Pala, Stefano Poli, Mireille Mouis, Gérard Ghibaudo. A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs. IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩. ⟨hal-02419609⟩
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