Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2019

Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors

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Dates et versions

hal-02400540 , version 1 (09-12-2019)

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  • HAL Id : hal-02400540 , version 1

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Thibauld Cazimajou, Thuy Thi Thu Nguyen, Maxime Legallais, Mireille Mouis, Céline Ternon, et al.. Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors. 2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 132-133. ⟨hal-02400540⟩
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