Atomic-scale simulations of Hx+ ions modification of SiO2 thin films and Si02 pattern flanks for an innovative ONO stack etching process - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2019

Atomic-scale simulations of Hx+ ions modification of SiO2 thin films and Si02 pattern flanks for an innovative ONO stack etching process

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hal-02337577 , version 1 (29-10-2019)

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  • HAL Id : hal-02337577 , version 1

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F. Pinzan, C. Petit-Etienne, F. Leverd, E. Despiau-Pujo. Atomic-scale simulations of Hx+ ions modification of SiO2 thin films and Si02 pattern flanks for an innovative ONO stack etching process. 41th International Symposium on Dry Process (DPS 2019), Nov 2019, Hiroshima, Japan. ⟨hal-02337577⟩
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