Piezoresistivity in unstrained and strained SOI MOSFETs

We hereby present the extraction and the study of piezoresistive (PR) coefficients in MOSFETs built on unstrained and strained SOI substrates. We have evidenced a strong dependence of these PR with the inversion charge density in particular for PMOS. These results are well explained by the Si bandstructure calculation which enlightens the effect of the strain and of the electric confinement on carrier mobility, up to high tensile strain values.

Domaines

Micro et nanotechnologies/Microélectronique

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https://hal.univ-grenoble-alpes.fr/hal-02061326

Soumis le : vendredi 8 mars 2019-09:07:21

Dernière modification le : jeudi 4 avril 2024-21:20:34

Dates et versions

hal-02061326 , version 1 (08-03-2019)

Identifiants

HAL Id : hal-02061326 , version 1
DOI : 10.1109/S3S.2014.7028213

Citer

Rémy Berthelon, Mikaël Cassé, Denis Rideau, Olivier Nier, François Andrieu, et al.. Piezoresistivity in unstrained and strained SOI MOSFETs. 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a2, ⟨10.1109/S3S.2014.7028213⟩. ⟨hal-02061326⟩

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