HfO2/Al2O3/InGaAs MOSCAP structures and InGaAs plasma nitridation elaborated in a 300mm pilot line
Résumé
We report on electrical characteristics of HfO2/Al2O3 gate dielectric on InGaAs as a function of Al2O3 ALD cycles. We also investigate the effect of a NH3 treatment in a 300mm PEALD chamber equipped with a capacitive plasma. It is shown that 8 Al2O3 cycles are required to achieve a high level capacitance (1.75μF/cm²) and an interface trap density (Dit) around 6×1012cm-²eV-1. The NH3 plasma treatment through an Al2O3 layer is able to integrate nitrogen at the InGaAs interface and to form an oxynitride GaOxNy.without deterioration of the C-V characteristics.