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HfO2/Al2O3/InGaAs MOSCAP structures and InGaAs plasma nitridation elaborated in a 300mm pilot line

Abstract : We report on electrical characteristics of HfO2/Al2O3 gate dielectric on InGaAs as a function of Al2O3 ALD cycles. We also investigate the effect of a NH3 treatment in a 300mm PEALD chamber equipped with a capacitive plasma. It is shown that 8 Al2O3 cycles are required to achieve a high level capacitance (1.75μF/cm²) and an interface trap density (Dit) around 6×1012cm-²eV-1. The NH3 plasma treatment through an Al2O3 layer is able to integrate nitrogen at the InGaAs interface and to form an oxynitride GaOxNy.without deterioration of the C-V characteristics.
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https://hal.univ-grenoble-alpes.fr/hal-01877863
Contributeur : Marielle Clot <>
Soumis le : jeudi 20 septembre 2018 - 14:31:57
Dernière modification le : vendredi 17 juillet 2020 - 09:10:08

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M Billaud., J Duvernay., H Grampeix., B Pelissier., M Martin., et al.. HfO2/Al2O3/InGaAs MOSCAP structures and InGaAs plasma nitridation elaborated in a 300mm pilot line. ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩. ⟨hal-01877863⟩

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