Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]
Résumé
The authors proposed in-depth experimentation and physical analysis showing the extreme robustness capability of low-voltage GaN HEMT in single and repetitive short-circuit. A 2DEG pinch-off behavior is analyzed depending on VDS voltage and charges' trapping / de-trapping relaxation time. A new drain-gate leakage-current mechanism at turn-off is suggested to explain the ultimate thermal-runaway failure-mechanism.
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