Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP∕InGaAs∕InP

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http://hal.univ-grenoble-alpes.fr/hal-02353348
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Submitted on : Thursday, November 7, 2019 - 11:48:43 AM
Last modification on : Saturday, November 9, 2019 - 1:14:02 AM

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D. Barba, B. Salem, D. Morris, V. Aimez, J. Beauvais, et al.. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP∕InGaAs∕InP. Journal of Applied Physics, American Institute of Physics, 2005, 98 (5), pp.054904. ⟨10.1063/1.2033143⟩. ⟨hal-02353348⟩

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