Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm

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http://hal.univ-grenoble-alpes.fr/hal-02353320
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Submitted on : Thursday, November 7, 2019 - 11:43:32 AM
Last modification on : Saturday, November 9, 2019 - 1:14:01 AM

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V Celibert., B. Salem., G Guillot., C Bru-Chevallier., L Grenouillet., et al.. Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm. Materials Research Society , 2003, Materials Research Society Symposium - Proceedings, 794, pp. 207-212. ⟨hal-02353320⟩

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