Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources

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http://hal.univ-grenoble-alpes.fr/hal-02352919
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Submitted on : Thursday, November 7, 2019 - 9:52:17 AM
Last modification on : Tuesday, November 19, 2019 - 2:03:01 AM

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B. Salem, D. Morris, Y. Salissou, V. Aimez, S. Charlebois, et al.. Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources. Journal of Vacuum Science and Technology A, American Vacuum Society, 2006, 24 (3), pp.774-777. ⟨10.1116/1.2183284⟩. ⟨hal-02352919⟩

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