Comparative study of two Atomic Layer Etching processes for GaN

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http://hal.univ-grenoble-alpes.fr/hal-02338959
Contributor : Marielle Clot <>
Submitted on : Wednesday, October 30, 2019 - 11:06:15 AM
Last modification on : Friday, November 1, 2019 - 1:06:00 AM

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  • HAL Id : hal-02338959, version 1

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C. Mannequin, C. You, G. Jacopin, T. Chevolleau, C. Durand, et al.. Comparative study of two Atomic Layer Etching processes for GaN. 19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue (USA), United States. ⟨hal-02338959⟩

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