Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Gilbert Sassine 1 Cecile Nail 2 Philippe Blaise 1 Benoit Sklenard 3 Mathieu Bernard Rémy Gassilloud 1 Aurélie Marty 1 Marc Veillerot 1 Christophe Vallée 4 Etienne Nowak 1 Gabriel Molas 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
2 CNRS - Centre National de la Recherche Scientifique
3 UGA - Université Grenoble Alpes
4 LTM - Laboratoire des technologies de la microélectronique
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Journal articles
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http://hal.univ-grenoble-alpes.fr/hal-02338836
Contributor : Marielle Clot <>
Submitted on : Wednesday, October 30, 2019 - 10:36:40 AM
Last modification on : Tuesday, November 5, 2019 - 1:22:30 AM

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Gilbert Sassine, Cecile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, et al.. Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions. Advanced Electronic Materials, Wiley, 2019, 5 (2), pp.1800658. ⟨10.1002/aelm.201800658⟩. ⟨hal-02338836⟩

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