Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor

Complete list of metadatas

http://hal.univ-grenoble-alpes.fr/hal-02332962
Contributor : Marielle Clot <>
Submitted on : Friday, October 25, 2019 - 10:31:20 AM
Last modification on : Tuesday, November 5, 2019 - 2:32:14 PM

Identifiers

  • HAL Id : hal-02332962, version 1

Collections

Citation

T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martinez, et al.. Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor. 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019, Nagoya, Japan. ⟨hal-02332962⟩

Share

Metrics

Record views

10