High Aspect Ratio and Low Damage III-V/Ge Heterostructure Via Etching

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http://hal.univ-grenoble-alpes.fr/hal-02324782
Contributor : Marielle Clot <>
Submitted on : Tuesday, October 22, 2019 - 9:37:01 AM
Last modification on : Monday, December 9, 2019 - 4:30:12 PM

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M. De Lafontaine, G. Gay, E. Pargon, C. Petit-Etienne, N. Rochat, et al.. High Aspect Ratio and Low Damage III-V/Ge Heterostructure Via Etching. Plasma Etch and Strip in Microelectronics (PESM), 11th International Workshop, May 2019, Grenoble, France. ⟨hal-02324782⟩

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