Plasma-induced damage during III-V semiconductor patterning for photonic and photovoltaic applications: from characterization to minimization - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Plasma-induced damage during III-V semiconductor patterning for photonic and photovoltaic applications: from characterization to minimization

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hal-02324729 , version 1 (22-10-2019)

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  • HAL Id : hal-02324729 , version 1

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E. Pargon, M.De Lafontaine, M. Fouchier, C. Petit-Etienne, G. Gay, et al.. Plasma-induced damage during III-V semiconductor patterning for photonic and photovoltaic applications: from characterization to minimization. 18th conference on defects recognition, imaging and physics in semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02324729⟩
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