Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

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http://hal.univ-grenoble-alpes.fr/hal-02183996
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Submitted on : Monday, July 15, 2019 - 5:09:57 PM
Last modification on : Thursday, July 18, 2019 - 1:27:39 AM

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F. Morisot, V. Nguyen, C. Montémont, T Maindron, D. Munoz-Rojas, et al.. Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices. Nanotechnology, Institute of Physics, 2019, 30 (38), pp.385202. ⟨10.1088/1361-6528/ab2aa5⟩. ⟨hal-02183996⟩

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