Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

Document type :
Journal articles
Complete list of metadatas

http://hal.univ-grenoble-alpes.fr/hal-02183969
Contributor : Labo Lmgp <>
Submitted on : Monday, July 15, 2019 - 5:05:52 PM
Last modification on : Wednesday, July 17, 2019 - 1:04:12 AM

Links full text

Identifiers

Collections

Citation

Getnet Kacha Deyu, Jonas Hunka, Hervé Roussel, Joachim Brötz, Daniel Bellet, et al.. Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping. Materials, MDPI, 2019, 12 (14), pp.2232. ⟨10.3390/ma12142232⟩. ⟨hal-02183969⟩

Share

Metrics

Record views

26