High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

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http://hal.univ-grenoble-alpes.fr/hal-02064247
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Submitted on : Monday, March 11, 2019 - 5:16:33 PM
Last modification on : Tuesday, November 5, 2019 - 2:30:12 PM

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S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.-P. Chauvat, et al.. High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics. Journal of Applied Physics, American Institute of Physics, 2014, 116 (23), pp.233504. ⟨10.1063/1.4903944⟩. ⟨hal-02064247⟩

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