Low temperature characterization of 14nm FDSOI CMOS devices

Abstract : A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.
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http://hal.univ-grenoble-alpes.fr/hal-02049067
Contributor : Frédérique Ducroquet <>
Submitted on : Tuesday, February 26, 2019 - 9:50:21 AM
Last modification on : Wednesday, March 20, 2019 - 6:39:32 AM

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M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, et al.. Low temperature characterization of 14nm FDSOI CMOS devices. 2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.29-32, ⟨10.1109/WOLTE.2014.6881018⟩. ⟨hal-02049067⟩

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