28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

H. Bohuslavskyi 1 S. Barraud 1 M. Cassé 1 V. Barrai 1 B. Bertrand 1 L. Hutin 1 F. Arnaud 2 P. Galy 2 M. Sanquer 3 S. de Franceschi 3 M. Vinet 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
2 ST-CROLLES - STMicroelectronics [Crolles]
3 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
Document type :
Conference papers
Complete list of metadatas
http://hal.univ-grenoble-alpes.fr/hal-02018135
Contributor : Marc Sanquer <>
Submitted on : Wednesday, February 13, 2019 - 4:07:47 PM
Last modification on : Tuesday, November 5, 2019 - 1:58:39 PM

Identifiers

  • HAL Id : hal-02018135, version 1

Collections

INAC-SPSMS | CEA | DRT | CEA-DRF | IRIG | LETI | UGA | CEA-GRE

Citation

H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, et al.. 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing. 2017 Silicon Nanoelectronics Workshop (SNW), Jun 2017, Kyoto, France. pp.143-144. ⟨hal-02018135⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

260