In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Abstract : In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
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http://hal.univ-grenoble-alpes.fr/hal-02016535
Contributor : Mireille Mouis <>
Submitted on : Tuesday, February 12, 2019 - 5:08:14 PM
Last modification on : Monday, March 11, 2019 - 3:56:58 PM

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M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, et al.. In depth characterization of hole transport in 14nm FD-SOI pMOS devices. 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.4, ⟨10.1109/S3S.2014.7028215⟩. ⟨hal-02016535⟩

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