Low-temperature characterization of Hall and effective mobility in junctionless transistors

Abstract : The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ Eff ) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s ) and corresponding Hall mobility (μ Hall ) Hall Effect measurements were carried out and compared to μ Eff .
Complete list of metadatas

http://hal.univ-grenoble-alpes.fr/hal-02016510
Contributor : Mireille Mouis <>
Submitted on : Tuesday, February 12, 2019 - 5:02:23 PM
Last modification on : Friday, October 11, 2019 - 8:22:57 PM

Identifiers

Citation

Min-Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, et al.. Low-temperature characterization of Hall and effective mobility in junctionless transistors. 2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.85-88, ⟨10.1109/WOLTE.2014.6881032⟩. ⟨hal-02016510⟩

Share

Metrics

Record views

47