Direct Bonding Mechanism of ALD-Al2O3 Thin Films

E. Beche 1 F. Fournel 1 V. Larrey 1 F. Rieutord 2 C. Morales 1 A.-M. Charvet 1 F. Madeira 1 G. Audoit 1 J.-M. Fabbri 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
2 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
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Conference papers
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http://hal.univ-grenoble-alpes.fr/hal-02015924
Contributor : Francois Rieutord <>
Submitted on : Tuesday, February 12, 2019 - 2:50:16 PM
Last modification on : Tuesday, November 5, 2019 - 2:02:20 PM

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E. Beche, F. Fournel, V. Larrey, F. Rieutord, C. Morales, et al.. Direct Bonding Mechanism of ALD-Al2O3 Thin Films. 13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.57-65, ⟨10.1149/06405.0057ecst⟩. ⟨hal-02015924⟩

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