High density and taper-free boron doped Si 1− x Ge x nanowire via two-step growth process

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Submitted on : Wednesday, January 30, 2019 - 6:17:01 PM
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Priyanka Periwal, Bassem Salem, Franck Bassani, Thierry Baron, Jean-Paul Barnes. High density and taper-free boron doped Si 1− x Ge x nanowire via two-step growth process. Journal of Vacuum Science and Technology A, American Vacuum Society, 2014, 32 (4), pp.041401. ⟨hal-02000814⟩

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