Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

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http://hal.univ-grenoble-alpes.fr/hal-01991984
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Submitted on : Thursday, January 24, 2019 - 11:03:57 AM
Last modification on : Wednesday, April 3, 2019 - 2:07:29 AM

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R. Cipro, T. Baron, J. Moeyaert, S. David, V. Gorbenko, et al.. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices. Applied Physics Letters, American Institute of Physics, 2014, 104 (26), pp.262103. ⟨10.1063/1.4886404⟩. ⟨hal-01991984⟩

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