Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

Document type :
Journal articles
Complete list of metadatas

http://hal.univ-grenoble-alpes.fr/hal-01991879
Contributor : Marielle Clot <>
Submitted on : Thursday, January 24, 2019 - 10:30:00 AM
Last modification on : Wednesday, April 3, 2019 - 2:07:29 AM

Identifiers

Collections

Citation

Y. Bogumilowicz, J. Hartmann, R. Cipro, R. Alcotte, M. Martin, et al.. Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates. Applied Physics Letters, American Institute of Physics, 2015, 107 (21), pp.212105. ⟨10.1063/1.4935943⟩. ⟨hal-01991879⟩

Share

Metrics

Record views

46